Enrgtech
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imt65r083m1hxuma1 Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
imt65r083m1hxuma1 Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IMT65R083M1HXUMA1
Enrgtech Part No:
ET28373665
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Order Today!
From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Series:
CoolSiC MOSFET 650 V G1
Pin Count:
8
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
PG-HSOF-8
Product Type:
MOSFET
Automotive Standard:
No
Standards/Approvals:
RoHS Compliant
Maximum Power Dissipation Pd:
158W
Maximum Operating Temperature:
175°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
23 V
Maximum Drain Source Voltage Vds:
650V
Maximum Continuous Drain Current Id:
59A
Maximum Drain Source Resistance Rds:
111mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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