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sctwa35n65g2v STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247
sctwa35n65g2v STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

Manufacturer:
STMicroelectronics
Manufacturer Part No:
SCTWA35N65G2V
Enrgtech Part No:
ET20012092
Warranty:
Manufacturer
60 - In Stock

Ships in 2-3 business days

Each

Quantity
Unit Price (ex VAT)
30
AED 46.39
Order Today!
From: United Kingdom
Est Ship Date: 08 Sep, 2026
Est Fastest Delivery: 09 Sep, 2026
Width:
5.1 mm
Height:
41.2mm
Length:
15.9mm
Series:
SCTWA35N65G2V
Pin Count:
3
Mount Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
Hip-247
Product Type:
SiC Power Module
Forward Voltage Vf:
3.3V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
240W
Typical Gate Charge Qg @ Vgs:
73nC
Maximum Operating Temperature:
200°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Voltage Vds:
650V
Maximum Continuous Drain Current Id:
45A
Maximum Drain Source Resistance Rds:
0.072Ω
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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