Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Manufacturer:

Manufacturer Part No:

GT40QR21,F(O

Enrgtech Part No:

ET14050101

Warranty:

Manufacturer

AED 20.19

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Maximum Continuous Collector Current:

40 A

Maximum Collector Emitter Voltage:

1200 V

Maximum Gate Emitter Voltage:

±25V

Maximum Power Dissipation:

230 W

Package Type:

TO-3P

Mounting Type:

Through Hole

Channel Type:

Pin Count:

Switching Speed:

2.5MHz

Transistor Configuration:

Single

Dimensions:

15.5 x 4.5 x 20mm

Maximum Operating Temperature:

175 °C

0900766b81436c59.pdf(datasheets)

0900766b81644faf.pdf(datasheets)